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HUF76437S3S

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HUF76437S3S

MOSFET N-CH 60V 71A D2PAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor UltraFET™ HUF76437S3S is a 60V N-Channel power MOSFET designed for demanding applications. This device features a continuous drain current (Id) of 71A at 25°C and a maximum power dissipation of 155W (Tc), making it suitable for high-power switching. The ultra-low on-resistance (Rds On) of 14mOhm at 71A and 10V gate drive ensures efficient operation with minimal power loss. Key electrical parameters include an input capacitance (Ciss) of 2230pF (max) at 25V and a gate charge (Qg) of 71nC at 10V. Operating across a temperature range of -55°C to 175°C (TJ), the HUF76437S3S utilizes a Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package, facilitating integration into compact designs. The device is specified for gate drive voltages between 4.5V and 10V, with a maximum gate-source voltage (Vgs) of ±16V and a threshold voltage (Vgs(th)) of 3V at 250µA. This component finds utility in various industries, including industrial power supplies, automotive systems, and telecommunications infrastructure.

Additional Information

Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C71A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 71A, 10V
FET Feature-
Power Dissipation (Max)155W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2230 pF @ 25 V

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