HUF76143S3ST
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor N-CHANNEL POWER MOSFET HUF76143S3ST. This component features 30 V drain-to-source voltage and a continuous drain current of 75A (Tc) at 25°C, with a maximum power dissipation of 225W (Tc). The Rds On is specified at a maximum of 5.5mOhm at 75A and 10V gate-source voltage. Key electrical parameters include an input capacitance (Ciss) of 3900 pF (Max) at 25V and a gate charge (Qg) of 114 nC (Max) at 10V. The device operates within a temperature range of -40°C to 150°C (TJ). The HUF76143S3ST is presented in a TO-263AB surface mount package. This technology is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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