HUF76013D3S
MOSFET N-CH 20V 20A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUF76013D3S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 50W (Tc). The device exhibits a low on-resistance (Rds On) of 22mOhm at 20A and 10V gate-to-source voltage. Key electrical characteristics include a gate charge (Qg) of 17nC (max) at 10V and an input capacitance (Ciss) of 624pF (max) at 20V. Operating across a temperature range of -55°C to 150°C (TJ), the HUF76013D3S is housed in a TO-252 (DPAK) surface-mount package, suitable for automated assembly. This MOSFET is utilized in various industries including automotive, industrial power supplies, and consumer electronics requiring robust power switching. The device supports gate drive voltages from 5V to 10V, with a maximum gate-to-source voltage (Vgs) of ±20V.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 20 V |
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