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HUF76009P3

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HUF76009P3

N-CHANNEL POWER MOSFET

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 20 V 20A (Tc) 41W (Tc) Through Hole TO-220AB

Additional Information

Series: UltraFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)41W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 20 V

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