HUF75939P3
MOSFET N-CH 200V 22A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's HUF75939P3 is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C (Tc). With a maximum power dissipation of 180W (Tc), it is well-suited for high-power switching and control functions. The device exhibits a low on-resistance (Rds On) of 125mOhm at 22A and 10V, ensuring efficient power transfer. Key parameters include a gate charge (Qg) of 152 nC at 20V and input capacitance (Ciss) of 2200 pF at 25V. The HUF75939P3 is housed in a standard TO-220-3 through-hole package and operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
