HUF75637S3ST
MOSFET N-CH 100V 44A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUF75637S3ST is an N-Channel, 100V UltraFET™ MOSFET designed for high-performance applications. This component features a continuous drain current of 44A at 25°C (Tc) and a maximum power dissipation of 155W (Tc). The Rds On is specified at a maximum of 30mOhm at 44A and 10V Vgs. With a low input capacitance of 1700 pF (Max) @ 25V Vds and a gate charge of 108 nC @ 20V Vgs, it offers efficient switching characteristics. The device is housed in a surface mount TO-263-3, D2PAK package, suitable for demanding thermal management. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly found in industrial, automotive, and power supply applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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