HUF75637P3
MOSFET N-CH 100V 44A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's UltraFET™ series HUF75637P3 is an N-channel power MOSFET designed for demanding power switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 44A at 25°C (Tc), with a maximum power dissipation (Pd) of 155W (Tc). The low on-resistance (Rds On) of 30mOhm is achieved at 44A and 10V Vgs, ensuring efficient power transfer. Key parameters include a gate charge (Qg) of 108 nC (max) at 20V Vgs and input capacitance (Ciss) of 1700 pF (max) at 25V Vds. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-220-3 through-hole configuration, this MOSFET is suitable for use in industrial, automotive, and power supply designs.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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