HUF75631P3
MOSFET N-CH 100V 33A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUF75631P3 is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a drain-to-source voltage of 100V and a continuous drain current of 33A (Tc) at 25°C, with a maximum power dissipation of 120W (Tc). The on-resistance (Rds On) is specified at 40mOhm maximum at 33A and 10V gate-source voltage (Vgs). Key parameters include a Vgs(th) of 4V maximum at 250µA, a low gate charge (Qg) of 79 nC maximum at 20V, and input capacitance (Ciss) of 1220 pF maximum at 25V. This through-hole device is housed in a TO-220-3 package and operates across a temperature range of -55°C to 175°C. Industries utilizing this component include industrial power supplies and motor control.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 25 V |
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