HUF75623P3
MOSFET N-CH 100V 22A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ HUF75623P3 is a high-performance N-Channel MOSFET designed for demanding applications. This through-hole component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C (Tc), with a maximum power dissipation of 85W (Tc). The device exhibits a low on-resistance (Rds On) of 64mOhm at 22A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 52 nC at 20V and input capacitance (Ciss) of 790 pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ) and is packaged in a TO-220-3 configuration. This MOSFET is commonly utilized in power switching, motor control, and power supply applications within the industrial and automotive sectors.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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