HUF75344A3
MOSFET N-CH 55V 75A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUF75344A3 is an N-Channel Power MOSFET featuring a 55V drain-source voltage. This through-hole component is housed in a TO-3P package and offers a continuous drain current of 75A at 25°C. The device exhibits a low on-resistance of 8mOhm at 75A and 10V gate-source voltage. Maximum power dissipation is 288.5W at the case temperature. Key parameters include input capacitance (Ciss) of 4855 pF at 25V and gate charge (Qg) of 208 nC at 20V. It operates across a temperature range of -55°C to 175°C. This MOSFET is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 288.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 208 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4855 pF @ 25 V |
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