HUF75333S3
MOSFET N-CH 55V 66A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUF75333S3 is an N-Channel UltraFET™ Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 66A at 25°C. The device offers a low on-resistance (Rds On) of 16mOhm at 66A and 10V gate drive, with a maximum power dissipation of 150W (Tc). Key electrical characteristics include a gate charge (Qg) of 85 nC (max) at 20V and input capacitance (Ciss) of 1300 pF (max) at 25V. The HUF75333S3 is housed in a TO-262 (I2PAK) package, facilitating through-hole mounting. Operating temperature range is specified from -55°C to 175°C (TJ). This MOSFET is suitable for use in various industrial and power management applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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