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HUF75329D3S

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HUF75329D3S

MOSFET N-CH 55V 20A TO252AA

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor UltraFET™ N-Channel Power MOSFET, HUF75329D3S. This TO-252 (DPAK) packaged device features a 55V drain-source breakdown voltage and a continuous drain current of 20A at 25°C (Tc). With a maximum on-resistance of 26mOhm at 20A and 10V gate drive, this MOSFET offers efficient power switching. It boasts a maximum power dissipation of 128W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge of 65nC (max) at 20V and input capacitance of 1060pF (max) at 25V. This component is suitable for applications in power management and automotive sectors.

Additional Information

Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs26mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)128W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 25 V

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