HUF75329D3
MOSFET N-CH 55V 20A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ N-Channel Power MOSFET, part number HUF75329D3. This TO-251AA packaged device offers a 55V drain-source breakdown voltage and a continuous drain current of 20A at 25°C case temperature. With a maximum on-resistance of 26mOhm at 20A and 10V gate drive, it features a 128W power dissipation capability. Key parameters include 65nC gate charge and 1060pF input capacitance. The HUF75329D3 is suitable for applications in industrial power supplies, motor control, and automotive systems. Its operating temperature range is -55°C to 175°C.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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