HUF75321D3S
MOSFET N-CH 55V 20A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ N-Channel MOSFET HUF75321D3S. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 20A at 25°C. The low on-resistance of 36mOhm is achieved at 20A and 10V gate drive. With a maximum power dissipation of 93W (Tc), the HUF75321D3S is housed in a TO-252 (DPAK) surface mount package, suitable for applications requiring efficient power handling. Key parameters include a gate charge (Qg) of 44 nC at 20V and input capacitance (Ciss) of 680 pF at 25V. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in automotive and industrial power management applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |