HUF75321D3
MOSFET N-CH 55V 20A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUF75321D3 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 93W. The Rds(On) is specified at a maximum of 36mOhm at 20A and 10V gate drive. Key parameters include a gate charge (Qg) of 44 nC at 20V and input capacitance (Ciss) of 680 pF at 25V. The HUF75321D3 utilizes Metal Oxide technology and is housed in an IPAK package suitable for through-hole mounting, operating across a temperature range of -55°C to 175°C. This device is commonly found in industrial and power control systems.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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