HUF75309P3
MOSFET N-CH 55V 19A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUF75309P3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-220-3 packaged device features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 19A at 25°C. The ON-resistance (Rds On) is specified at a maximum of 70mOhm at 19A and 10V gate drive. Key parameters include a gate charge (Qg) of 24 nC at 20V and input capacitance (Ciss) of 350 pF at 25V. With a maximum power dissipation of 55W and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for use in industrial power supplies, motor controls, and automotive electronics.
Additional Information
Series: UltraFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |