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HUF75229P3

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HUF75229P3

MOSFET N-CH 50V 44A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor UltraFET™ N-Channel Power MOSFET, part number HUF75229P3. This component features a 50V drain-source voltage (Vdss) and a continuous drain current of 44A at 25°C (Tc). With a maximum on-resistance (Rds On) of 22mOhm at 44A and 10V gate-source voltage (Vgs), it offers efficient power switching. The device has a gate charge (Qg) of 75 nC maximum at 20V Vgs and input capacitance (Ciss) of 1060 pF maximum at 25V Vds. Power dissipation is rated at 90W (Tc). The HUF75229P3 is housed in a TO-220-3 through-hole package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in applications such as power supplies, motor control, and automotive systems.

Additional Information

Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 44A, 10V
FET Feature-
Power Dissipation (Max)90W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 25 V

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