HUF75229P3
MOSFET N-CH 50V 44A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ N-Channel Power MOSFET, part number HUF75229P3. This component features a 50V drain-source voltage (Vdss) and a continuous drain current of 44A at 25°C (Tc). With a maximum on-resistance (Rds On) of 22mOhm at 44A and 10V gate-source voltage (Vgs), it offers efficient power switching. The device has a gate charge (Qg) of 75 nC maximum at 20V Vgs and input capacitance (Ciss) of 1060 pF maximum at 25V Vds. Power dissipation is rated at 90W (Tc). The HUF75229P3 is housed in a TO-220-3 through-hole package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in applications such as power supplies, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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