HRF3205
MOSFET N-CH 55V 100A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor HRF3205 is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) capability of 100A at 25°C, with a maximum power dissipation of 175W. The device exhibits a low on-resistance (Rds On) of 8mOhm at 59A and 10V. Key parameters include a gate charge (Qg) of 170 nC at 10V and an input capacitance (Ciss) of 4000 pF at 25V. The HRF3205 is housed in a TO-220-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, motor control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 59A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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