FQU8N25TU
MOSFET N-CH 250V 6.2A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel MOSFET, part number FQU8N25TU, offers a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.2A at 25°C (Tc). This through-hole component utilizes Metal Oxide technology and is packaged in an IPAK (TO-251-3 Short Leads, IPAK, TO-251AA). Key parameters include a maximum Rds On of 550mOhm at 3.1A and 10V, with a gate charge (Qg) of 15 nC @ 10V. Power dissipation capabilities are rated at 2.5W ambient (Ta) and 50W case (Tc). This device is suitable for applications in power supply, motor control, and general switching power circuits across various industrial sectors. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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