FQU4N50TU
MOSFET N-CH 500V 2.6A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel MOSFET, part number FQU4N50TU, is a 500V device with a continuous drain current of 2.6A at 25°C (Tc). This through-hole component, housed in an IPAK package (TO-251-3 Short Leads), offers a maximum power dissipation of 45W (Tc). Key electrical characteristics include a Vgs(th) of 5V at 250µA and a low on-resistance (Rds On) of 2.7 Ohm maximum at 1.3A and 10V drive. The gate charge (Qg) is specified at 13 nC maximum at 10V, with input capacitance (Ciss) at 460 pF maximum at 25V. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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