FQU4N25TU
MOSFET N-CH 250V 3A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel MOSFET, part number FQU4N25TU, offers a 250V drain-source voltage and 3A continuous drain current at 25°C (Tc). This through-hole component features a 1.75 Ohm maximum Rds(on) at 1.5A and 10V Vgs. The device boasts a 5.6 nC gate charge and 200 pF input capacitance, with a 10V drive voltage. Power dissipation is rated at 37W (Tc) and 2.5W (Ta). Designed for demanding applications, this TO-251-3 (IPAK) packaged MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). Its robust construction makes it suitable for use in power supply and general-purpose switching applications within various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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