FQU2N80TU
MOSFET N-CH 800V 1.8A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQU2N80TU is an N-Channel Power MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 1.8A at 25°C (Tc). The device has a maximum on-resistance (Rds On) of 6.3 Ohms at 900mA and 10V gate drive. Key capacitance specifications include an input capacitance (Ciss) of 550 pF and a gate charge (Qg) of 15 nC, both measured at specified voltages.
The FQU2N80TU is housed in a TO-251-3 Short Leads, IPAK (TO-251AA) package, suitable for through-hole mounting. It offers a maximum power dissipation of 2.5W (Ta) and 50W (Tc). The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is utilized in various industrial applications, including power supplies and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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