FQU1N50TU
MOSFET N-CH 500V 1.1A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQU1N50TU is an N-Channel Power MOSFET from the QFET® series. This through-hole device, packaged in an IPAK (TO-251-3 Short Leads), features a maximum Drain-Source Voltage (Vdss) of 500 V. The continuous Drain Current (Id) at 25°C (Tc) is rated at 1.1 A, with a maximum power dissipation of 2.5 W (Ta) and 25 W (Tc). Key electrical characteristics include a maximum On-Resistance (Rds On) of 9 Ohms at 550 mA and 10 V Vgs, and a typical Gate Charge (Qg) of 5.5 nC at 10 V. Input capacitance (Ciss) is a maximum of 150 pF at 25 V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum Gate-Source Voltage (Vgs) of ±30V. This component is suitable for applications in power supply units and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 550mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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