FQU10N20TU
MOSFET N-CH 200V 7.6A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® FQU10N20TU is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 7.6A at 25°C (Tc). The Rds On is specified at a maximum of 360mOhm at 3.8A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 18nC maximum at 10V and an Input Capacitance (Ciss) of 670pF maximum at 25V. The power dissipation capability is 2.5W (Ta) and 51W (Tc). The device is housed in an IPAK package with through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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