FQT4N20TF
MOSFET N-CH 200V 850MA SOT223-4Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQT4N20TF is a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 850mA at 25°C. The FQT4N20TF boasts a low on-resistance (Rds On) of 1.4 Ohms maximum at 425mA and 10V gate drive. With a maximum power dissipation of 2.2W at 25°C, it is packaged in a surface-mount SOT-223-4 (TO-261-4, TO-261AA) for efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 6.5 nC maximum at 10V and input capacitance (Ciss) of 220 pF maximum at 25V. This MOSFET is suitable for use in power supply applications and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 850mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 425mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
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