FQPF9N50YDTU
MOSFET N-CH 500V 5.3A TO220F-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF9N50YDTU is an N-Channel Power MOSFET from the QFET® series. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 5.3A at 25°C. The Rds(On) is specified at a maximum of 730mOhm when driven at 10V Vgs and carrying 2.65A. With a power dissipation of 50W (Tc), it is suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 36nC (max) at 10V Vgs and input capacitance (Ciss) of 1450pF (max) at 25V Vds. The Fairchild Semiconductor QFET® FQPF9N50YDTU is packaged in a TO-220F-3 (Y-Forming) through-hole configuration, designed for robust thermal performance. This component finds application in power supply units, motor control, and lighting solutions.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 2.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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