FQPF9N50CT
MOSFET N-CH 500V 9A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor QFET® N-Channel MOSFET, part number FQPF9N50CT, offers a 500V drain-to-source voltage and a continuous drain current of 9A (Tc) at 25°C. This through-hole component features a maximum power dissipation of 44W (Tc) and an Rds(on) of 800mOhm at 4.5A, 10V. With a gate charge of 35 nC @ 10V and input capacitance of 1030 pF @ 25V, this TO-220F-3 packaged device is suitable for applications in power supply units and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V |
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