FQPF9N50
MOSFET N-CH 500V 5.3A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF9N50 is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 5.3 A at 25°C. With a maximum power dissipation of 50 W (Tc), it features a low on-resistance (Rds On) of 730 mOhm at 2.65 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 36 nC at 10 V and input capacitance (Ciss) of 1450 pF at 25 V. The FQPF9N50 is housed in a TO-220F-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for use in power supply units, lighting controls, and motor drive applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 2.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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