FQPF9N25
MOSFET N-CH 250V 6.7A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF9N25 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 6.7 A at 25°C (Tc), with a maximum power dissipation of 45 W (Tc). The FQPF9N25 offers a low on-resistance (Rds On) of 420 mOhm at 3.35 A and 10 V, and gate charge (Qg) of 20 nC at 10 V. It is housed in a TO-220F-3 through-hole package, suitable for power switching and general-purpose amplification in industries such as industrial power supplies, lighting, and motor control. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage of ±30V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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