FQPF90N10V2
MOSFET N-CH 100V 90A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF90N10V2 is a QFET® series N-Channel Power MOSFET. This through-hole component features a Drain to Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 90A at 25°C. The device exhibits a maximum Rds(on) of 10mOhm at 45A and 10V. Key parameters include a typical gate charge (Qg) of 191 nC at 10V and input capacitance (Ciss) of 6150 pF at 25V. The maximum power dissipation is 83W at a case temperature. The FQPF90N10V2 is housed in a TO-220F-3 package, suitable for applications in power conversion, motor control, and automotive systems. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 191 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6150 pF @ 25 V |
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