FQPF8P10
MOSFET P-CH 100V 5.3A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF8P10 is a P-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 100V. This device features a continuous drain current (Id) of 5.3A at 25°C and a maximum power dissipation of 28W. The on-resistance (Rds On) is a maximum of 530mOhm at 2.65A and 10V gate drive. Key parameters include a gate charge (Qg) of 15 nC at 10V and an input capacitance (Ciss) of 470 pF at 25V. The FQPF8P10 is housed in a TO-220F-3 package with through-hole mounting. It operates across a wide temperature range of -55°C to 175°C. This component finds application in power management, motor control, and general-purpose switching circuits.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 2.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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