FQPF7N40
MOSFET N-CH 400V 4.6A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQPF7N40 is a QFET® series N-Channel Power MOSFET. This device features a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 4.6 A at 25°C (Tc). The Rds On is specified at a maximum of 800 mOhm at 2.3 A and 10 V. It offers a gate charge (Qg) of 22 nC and input capacitance (Ciss) of 780 pF. The FQPF7N40 is housed in a TO-220F-3 full pack package for through-hole mounting and has a maximum power dissipation of 42 W (Tc). This MOSFET is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 25 V |
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