FQPF7N20
MOSFET N-CH 200V 4.8A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF7N20 is an N-Channel Power MOSFET from the QFET® series. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain current (Id) of 4.8A at 25°C. The Rds(On) is specified at a maximum of 690mOhm when driven at 10V with a drain current of 2.4A. With a maximum power dissipation of 37W (Tc), this MOSFET is suitable for through-hole mounting in a TO-220F-3 package. Key parameters include a Gate Charge (Qg) of 10 nC at 10V and an Input Capacitance (Ciss) of 400 pF at 25V. This component is utilized in power supply, lighting, and industrial motor control applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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