FQPF6N50
MOSFET N-CH 500V 3.6A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® FQPF6N50 is an N-channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 3.6 A at 25°C, with a maximum power dissipation of 42 W (Tc). The low on-resistance of 1.3 Ohm maximum at 1.8 A and 10 V gate drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 22 nC at 10 V and input capacitance (Ciss) of 790 pF at 25 V. The FQPF6N50 utilizes TO-220F-3 full pack through-hole mounting. This component is suitable for use in power supply units, lighting, and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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