FQPF6N25
MOSFET N-CH 250V 4A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF6N25, a QFET® series N-Channel Power MOSFET, features a 250V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Tc). This through-hole component, housed in a TO-220F-3 package, offers a maximum power dissipation of 37W (Tc). Key electrical parameters include a typical Rds(on) of 1 Ohm at 2A and 10V, and a gate charge (Qg) of 8.5 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 300 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this device is utilized in applications such as power supplies, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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