FQPF5P10
MOSFET P-CH 100V 2.9A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF5P10, a P-Channel QFET® MOSFET, features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.9A at 25°C (Tc). This component offers a maximum on-resistance (Rds On) of 1.05 Ohms at 1.45A and 10V gate-source voltage. With a maximum power dissipation of 23W (Tc) and a gate charge (Qg) of 8.2 nC at 10V, it is suitable for applications requiring efficient switching. The TO-220F-3 package facilitates through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This device is commonly utilized in power management and switching applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 1.45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |