FQPF5N60CYDTU
MOSFET N-CH 600V 4.5A TO220F-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel MOSFET, part number FQPF5N60CYDTU, offers a 600 V drain-source voltage and a continuous drain current of 4.5 A at 25°C. This through-hole component features a maximum Rds(on) of 2.5 Ohms at 2.25 A and 10 V gate-source voltage, with a typical gate charge of 19 nC at 10 V. The TO-220F-3 (Y-Forming) package allows for a maximum power dissipation of 33 W. Key parameters include an input capacitance (Ciss) of 670 pF at 25 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA. This device is suitable for applications in power supply, lighting, and industrial motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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