FQPF5N50CFTU
MOSFET N-CH 500V 5A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FRFET® N-Channel Power MOSFET, part number FQPF5N50CFTU, features a 500V drain-source breakdown voltage and a continuous drain current of 5A at 25°C case temperature. This TO-220F-3 packaged device offers a typical Rds(on) of 1.55 Ohm at 2.5A and 10V gate drive. Key parameters include a gate charge of 24nC (max) and input capacitance of 625pF (max). With a maximum power dissipation of 38W (Tc), it is suitable for applications in power supply design, lighting, and motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: FRFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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