FQPF5N30
MOSFET N-CH 300V 3.9A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel Power MOSFET, FQPF5N30. This device offers a 300V drain-source breakdown voltage and 3.9A continuous drain current at 25°C (Tc). Featuring 900mOhm maximum Rds(on) at 1.95A and 10V Vgs, it utilizes Metal Oxide technology. Key parameters include 13nC gate charge (Qg) at 10V and 430pF input capacitance (Ciss) at 25V. The FQPF5N30 is housed in a TO-220F-3 package with a maximum power dissipation of 35W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is commonly employed in power supply units and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 1.95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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