FQPF5N20L
MOSFET N-CH 200V 3.5A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF5N20L is a 200V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 1.2 Ohm maximum at 1.75A and 10V Vgs, with a continuous drain current capability of 3.5A at 25°C. The FQPF5N20L offers a gate charge of 6.2 nC maximum at 5V Vgs and an input capacitance of 325 pF maximum at 25V Vds. With a maximum power dissipation of 32W at 25°C (Tc) and an operating temperature range of -55°C to 150°C, it is suitable for use in power supplies, lighting, and motor control systems. The TO-220F-3 package facilitates through-hole mounting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |