FQPF4N80
MOSFET N-CH 800V 2.2A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF4N80 is an N-Channel Power MOSFET from the QFET® series. This device features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 2.2A at 25°C. The Rds(On) is specified at a maximum of 3.6 Ohms at 1.1A and 10V gate drive. With a maximum power dissipation of 43W (Tc), the FQPF4N80 is housed in a TO-220F-3 through-hole package. Typical applications include power supplies, lighting, and motor control systems. The device offers a gate charge (Qg) of 25 nC at 10V and an input capacitance (Ciss) of 880 pF at 25V. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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