FQPF3N50C
MOSFET N-CH 500V 3A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQPF3N50C is a QFET® series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 3 A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 2.5 Ohms at 1.5 A and 10 V gate drive. With a low gate charge (Qg) of 13 nC at 10 V and an input capacitance (Ciss) of 365 pF at 25 V, it is optimized for reduced switching losses. The FQPF3N50C is housed in a TO-220F-3 package, suitable for through-hole mounting, and offers a maximum power dissipation of 25 W (Tc). Its operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
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