FQPF3N40
MOSFET N-CH 400V 1.6A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF3N40 is an N-Channel Power MOSFET from the QFET® series. This component features a drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 1.6A at 25°C. The device offers a low on-resistance (Rds On) of 3.4 Ohms maximum at 800mA and 10V gate-source voltage. With a maximum power dissipation of 20W (Tc), it is suitable for applications requiring efficient switching. Key electrical characteristics include a gate charge (Qg) of 7.5 nC maximum at 10V and an input capacitance (Ciss) of 230 pF maximum at 25V. The FQPF3N40 is housed in a TO-220F-3 through-hole package. This component finds application in power supply units, motor control, and general power switching across various industrial and consumer electronics sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |