FQPF32N12V2
MOSFET N-CH 120V 32A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF32N12V2 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 120V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 32A at 25°C (Tc). The Rds(On) is specified at a maximum of 50mOhm at 16A and 10V Vgs, ensuring low conduction losses. With a maximum power dissipation of 50W at 25°C (Tc), it is suitable for power conversion, motor control, and power supply designs. Key parameters include a gate charge (Qg) of 53 nC at 10V and input capacitance (Ciss) of 1860 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220F-3 package for through-hole mounting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 25 V |
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