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FQPF32N12V2

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FQPF32N12V2

MOSFET N-CH 120V 32A TO220F

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's QFET® series FQPF32N12V2 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 120V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 32A at 25°C (Tc). The Rds(On) is specified at a maximum of 50mOhm at 16A and 10V Vgs, ensuring low conduction losses. With a maximum power dissipation of 50W at 25°C (Tc), it is suitable for power conversion, motor control, and power supply designs. Key parameters include a gate charge (Qg) of 53 nC at 10V and input capacitance (Ciss) of 1860 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220F-3 package for through-hole mounting.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1860 pF @ 25 V

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