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FQPF2P25

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FQPF2P25

MOSFET P-CH 250V 1.8A TO220F

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FQPF2P25 is a P-Channel MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain current (Id) of 1.8 A at 25°C. The device offers a maximum on-resistance (Rds On) of 4 $\Omega$ at 900 mA, 10 V. With a maximum power dissipation of 32 W (Tc), the FQPF2P25 is suitable for applications requiring high voltage switching. Key parameters include a gate charge (Qg) of 8.5 nC at 10 V and input capacitance (Ciss) of 250 pF at 25 V. The component is housed in a TO-220F-3 package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in various industrial and power management applications.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Rds On (Max) @ Id, Vgs4Ohm @ 900mA, 10V
FET Feature-
Power Dissipation (Max)32W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V

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