FQPF2P25
MOSFET P-CH 250V 1.8A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF2P25 is a P-Channel MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain current (Id) of 1.8 A at 25°C. The device offers a maximum on-resistance (Rds On) of 4 $\Omega$ at 900 mA, 10 V. With a maximum power dissipation of 32 W (Tc), the FQPF2P25 is suitable for applications requiring high voltage switching. Key parameters include a gate charge (Qg) of 8.5 nC at 10 V and input capacitance (Ciss) of 250 pF at 25 V. The component is housed in a TO-220F-3 package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in various industrial and power management applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |