FQPF2N90
MOSFET N-CH 900V 1.4A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF2N90, an N-Channel Power MOSFET from the QFET® series, offers a 900V drain-source breakdown voltage and a continuous drain current of 1.4A at 25°C (Tc). This component features a maximum power dissipation of 35W (Tc) and a low on-resistance of 7.2O maximum at 700mA, 10V. The gate charge (Qg) is specified at 15 nC maximum at 10V, with an input capacitance (Ciss) of 500 pF maximum at 25V. The FQPF2N90 is housed in a TO-220F-3 package, suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in applications requiring high voltage switching, including power supplies and lighting systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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