FQPF2N30
MOSFET N-CH 300V 1.34A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF2N30 is a 300V N-channel power MOSFET designed for high-efficiency applications. This component features a continuous drain current of 1.34A at 25°C and a maximum power dissipation of 16W (Tc). With a low Rds On of 3.7 Ohms at 670mA and 10V, it minimizes conduction losses. Key electrical parameters include a Vgs(th) of 5V at 250µA and a gate charge (Qg) of 5 nC at 10V. The input capacitance (Ciss) is a maximum of 130 pF at 25V. The FQPF2N30 is housed in a TO-220F-3 package, suitable for through-hole mounting. Its robust design and performance characteristics make it suitable for uses in power supplies, lighting, and motor control systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.34A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 670mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 16W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 25 V |
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