FQPF28N15
MOSFET N-CH 150V 16.7A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF28N15 is an N-Channel Power MOSFET featuring a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 16.7A at 25°C. This device offers a low on-resistance (Rds On) of 90mOhm maximum at 8.35A and 10V gate drive, with a gate charge (Qg) of 52 nC maximum at 10V. The input capacitance (Ciss) is 1600 pF maximum at 25V. Designed for through-hole mounting, it is housed in a TO-220F-3 package, providing a maximum power dissipation of 60W. This component is suitable for applications in power supply units, motor control, and general-purpose power switching. The operating temperature range is -55°C to 175°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 8.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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