FQPF19N10L
MOSFET N-CH 100V 13.6A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® FQPF19N10L is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 13.6A at 25°C. The FQPF19N10L offers a maximum on-resistance (Rds On) of 100mOhm at 6.8A and 10V. Its low gate charge of 18 nC at 5V (Qg) and input capacitance of 870 pF at 25V (Ciss) contribute to reduced switching losses. The device supports gate-source voltages (Vgs) up to ±20V and has a threshold voltage (Vgs(th)) of 2V at 250µA. With a maximum power dissipation of 38W (Tc), it is suitable for use in power supply, motor control, and lighting applications across various industrial sectors. The component is supplied in a TO-220F-3 package and operates within an extended temperature range of -55°C to 175°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 6.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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