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FQPF18N20V2YDTU

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FQPF18N20V2YDTU

MOSFET N-CH 200V 18A TO220F-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Fairchild Semiconductor QFET® FQPF18N20V2YDTU is an N-Channel Power MOSFET designed for demanding applications. This component offers a Vdss rating of 200V and a continuous drain current (Id) of 18A at 25°C. Featuring a low Rds On of 140mOhm maximum at 9A and 10V Vgs, it minimizes conduction losses. The device has a maximum power dissipation of 40W (Tc) and a typical gate charge (Qg) of 26 nC at 10V Vgs, enabling efficient switching. With an input capacitance (Ciss) of 1080 pF maximum at 25V, it is suitable for power conversion circuits. The TO-220F-3 (Y-Forming) through-hole package provides robust thermal management. This MOSFET is commonly utilized in industrial power supplies, lighting, and motor control applications.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs140mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 25 V

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