FQPF18N20V2YDTU
MOSFET N-CH 200V 18A TO220F-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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The Fairchild Semiconductor QFET® FQPF18N20V2YDTU is an N-Channel Power MOSFET designed for demanding applications. This component offers a Vdss rating of 200V and a continuous drain current (Id) of 18A at 25°C. Featuring a low Rds On of 140mOhm maximum at 9A and 10V Vgs, it minimizes conduction losses. The device has a maximum power dissipation of 40W (Tc) and a typical gate charge (Qg) of 26 nC at 10V Vgs, enabling efficient switching. With an input capacitance (Ciss) of 1080 pF maximum at 25V, it is suitable for power conversion circuits. The TO-220F-3 (Y-Forming) through-hole package provides robust thermal management. This MOSFET is commonly utilized in industrial power supplies, lighting, and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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